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Industrial research groups such as Intel, IBM and AMD have shown interests in developing similar devices, as well as mechanisms to migrate mask layouts from Bulk-MOS to FinFETs. Design Issues such as high quality ultra thin fin lithography and source\drain resistance need to be resolved and a high-yield process flow needs to be established by ...

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May 28, 2013 · Samsung is talking a bit about their upcoming 14nm FinFET process, and they cleared up a few grey areas about the hybrid nature of this process. During a talk with Samsung’s Ana Hunter late last week, much of the confusion about what they are doing was cleared up.

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design of a FinFET structure is a fairly complicated process as it must contend with such diverse aspects as the integration of high-k metal gates and stress engineering with the incorporation of SiGe and Si:C source/drain regions for PMOS and NMOS, respectively.

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See full list on techdesignforums.com "Since 2011, Intel has delivered over 7 million FinFET wafers, and the new 22FFL process leverages all of that manufacturing experience to create a differentiating design platform for next ...

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Oct 30, 2014 · Furthermore, what I am hearing is that Intel’s 14nm process is now a shrink of the 22nm process with no new technology introductions. I am also hearing Intel is still struggling with 14nm yields but they are ramping up anyway and working on yield as they go.

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To take VLSI chip integration further FinFET is replaced by Nanowires with metal gate all around. The CEA Leti, imec and IBM, all are making this technology realistic. IBM is little ahead by announcing a breakthrough process to use Nano sheets to make nano wires by using extreme ultraviolet (EUV) lithography and other innovation in nano-tech. OUTDATED version. Please go to:https://www.youtube.com/watch?v=W3rfVpkNquA

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